AOD242
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=20V
I
D
=20A
8
Capacitance (pF)
1800
1600
1400
1200
1000
800
600
400
200
0
0
10
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
20
0
0
15
20
25
30
35
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
40
C
rss
C
oss
C
iss
V
GS
(Volts)
6
4
2
1000.0
100.0
10µs
200
10µs
100µs
Power (W)
T
J(Max)
=175°C
T
C
=25°C
160
120
80
40
0
R
DS(ON)
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
DC
T
J(Max)
=175°C
T
C
=25°C
1ms
10ms
17
5
2
10
100
0.0001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
1
R
θJC
=2.8°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
T
on
Single Pulse
T
0.001
0.01
0.1
1
10
100
0.01
1E-05
0.0001
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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