AOD210 参数 Datasheet PDF下载

AOD210

30V N-Channel MOSFET

General Description

The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high

frequency switching performance. Power losses are minimized due to an extremely low combination of

R

DS(ON)

and C

rss

.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.

Features

V

DS

I

D

(at V

GS

=10V)

R

DS(ON)

(at V

GS

=10V)

R

DS(ON)

(at V

GS

= 4.5V)

30V

70A

< 3mΩ

< 4mΩ

D

G

S

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

Symbol

Parameter

V

DS

Drain-Source Voltage

V

GS

Gate-Source Voltage

Continuous Drain

Current

G

Pulsed Drain Current

Continuous Drain

Current

Avalanche Current

C

C

C

Maximum

30

±20

70

55

390

23

18

68

231

150

75

2.7

1.7

-55 to 175

Units

V

V

A

T

C

=25°C

T

C

=100°C

T

A

=25°C

T

A

=70°C

I

D

I

DM

I

DSM

I

AS

, I

AR

E

AS

, E

AR

P

D

P

DSM

T

J

, T

STG

A

A

mJ

W

W

°C

Avalanche energy L=0.1mH

Power Dissipation

Power Dissipation

B

T

C

=25°C

T

C

=100°C

T

A

=25°C

A

T

A

=70°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

AD

Maximum Junction-to-Ambient

Maximum Junction-to-Case

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJC

Typ

14.2

39

0.8

Max

17

47

1

Units

°C/W

°C/W

°C/W

1/6

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