AOC2411
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=-10V
I
D
=-1A
4
1600
C
iss
1200
3
Capacitance (pF)
-V
GS
(Volts)
800
2
1
400
C
oss
C
rss
0
0
6
9
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
3
15
0
0
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
100.0
10µs
10.0
50
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
100µs
40
1ms
-I
D
(Amps)
Power (W)
30
1.0
10ms
DC
0.1
20
100ms
T
J(Max)
=150°C
T
C
=25°C
10
0.0
0.01
0.1
1
10
100
0
0.001
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
10
100
1000 10000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/(T
on
+T)
T
J,PK
=T
A
+P
D
.Z
θJA
.R
θJA
R
θJA
=155°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
P
D
T
on
T
100
1000
0.01
1E-05
0.0001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
10
4/4
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