AOT410L/AOB410L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
10V
120
6.5V
7V
90
I
D
(A)
I
D
(A)
90
60
30
V
GS
=5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
8
Normalized On-Resistance
7
R
DS(ON)
(m
Ω
)
6
5
4
3
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
10
V
GS
=7V
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
200
V
GS
=7V
I
D
=20A
V
GS
=10V
I
D
=20A
30
0
3
4
5
6
7
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
6V
150
120
180
V
DS
=5V
60
5.5V
125°C
25°C
17
5
2
10
V
GS
=10V
0
Temperature (°C)
18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
12
I
D
=20A
1.0E+02
1.0E+01
10
R
DS(ON)
(m
Ω
)
125°C
40
1.0E+00
I
S
(A)
125°C
1.0E-01
1.0E-02
1.0E-03
25°C
8
25°C
6
4
5
6
7
8
9
10
1.0E-04
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/7
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