AOT270L/AOB270L
75V N-Channel MOSFET
General Description
The AOT270L/AOB270L uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both conduction and switching power losses are minimized due
to an extremely low combination of R
DS(ON)
, Ciss and Coss. This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=6V)
75V
140A
< 2.6mΩ
< 3.0mΩ
(< 2.3mΩ
∗
)
(< 2.8mΩ
)
∗
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
75
±20
140
110
560
21.5
17
120
720
500
250
2.1
1.3
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
C
T
C
=100°
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
* Surface mount package TO263
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
12
50
0.25
Max
15
60
0.3
Units
°
C/W
°
C/W
°
C/W
1/6
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