AOT14N50/AOB14N50/AOTF14N50
500V, 14A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=400V
I
D
=14A
1000
Capacitance (pF)
C
oss
V
GS
(Volts)
9
10000
C
iss
12
100
C
rss
10
6
3
0
0
30
40
50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
20
60
1
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
100
100
10
R
DS(ON)
limited
10µs
100µs
I
D
(Amps)
10
10µs
R
DS(ON)
limited
100µs
1ms
1
DC
10ms
0.1s
1s
10s
I
D
(Amps)
1ms
1
10ms
DC
T
J(Max)
=150°C
T
C
=25°C
0.1s
0.1
0.1
T
J(Max)
=150°
C
T
C
=25°
C
0.01
1
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT14N50/AOB14N50
(Note F)
10
1000
0.01
1
10
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF14N50 (Note F)
100
1000
18
15
Current rating I
D
(A)
12
9
6
3
0
0
25
50
75
100
125
150
T
CASE
(°
C)
Figure 11: Current De-rating (Note B)
4/6
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