AO8822
20V Common-Drain Dual
N-Channel Mosfet
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
3V
4V
15
20
V
DS
=5V
30
I
D
(A)
20
V
GS
=2V
I
D
(A)
10
125°
C
10
5
25°
C
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
40
35
R
DS(ON)
(m
Ω
)
30
25
20
15
V
GS
=10V
10
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
5
V
GS
=4.5V
V
GS
=3.6V
V
GS
=2.5V
Normalized On-Resistance
V
GS
=1.8V
0
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
V
GS
=3.6V
I
D
=6A
1.4
V
GS
=4.5V
I
D
=6.6A
V
GS
=2.5V
I
D
=5.5A
V
GS
=10V
I
D
=7A
V
GS
=1.8V
5
I
D
=2A
17
1.2
1
2
10
0.8
0
25
50
75
100
125
150
175
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+01
60
I
D
=7A
50
R
DS(ON)
(m
Ω
)
1.0E+00
40
1.0E-01
I
S
(A)
125°
C
40
1.0E-02
1.0E-03
1.0E-04
25°
C
30
125°
C
20
25°
C
10
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/5
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