Freescale
AO6701 /MC6701
MOSFET SPECIFICATIONS (TA= 25oC UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
V = 0 V, V = +/-8 V
-0.4
±100 nA
DS
GS
VDS = -16 V, VGS = 0 V
-1
uA
-10
Zero Gate Voltage Drain Current
On-State Drain CurrentA
IDSS
V = -16 V, V = 0 V, T = 55oC
DS
GS
J
ID(on)
VDS = -5 V, VGS = -4.5V
VGS = -4.5V, ID = -2.5A
VGS = -2.5V, ID = -1.9A
VDS = -5V, ID = -2.5A
IS = -1.6A, VGS = 0 V
-5
A
0.130
0.190
Drain-Source On-State ResistanceA
rDS(on)
Ω
Forward TranconductanceA
Diode Forward Voltage
g
3
-0.70
S
V
fs
VSD
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
6.0
0.80
1.30
6.5
20
g
VDS = -5V, VGS = -4.5V,
ID = -2.5A
nC
ns
Q
gs
Q
gd
td(on)
tr
td(of f )
tf
VDD = -5 V, R = 5OHM,
L
VGEN = -4.5V, R = 6 OHM
Turn-Off Delay Time
Fall-Time
31
21
G
SCHOTTKY SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Unit
Min Typ Max
IF = 0.5 A
0.48
0.4
0.1
1
V
V
VF
Forward Voltage Drop
IF = 0.5 A, TJ = 125oC
Vr = 30 V
Vr = 30 V, TJ = 75oC
Vr = 30 V, TJ = 125oC
Irm
CT
Maximum Reverse Leakage Current
mA
pF
10
Vr = 10 V
31
Junction Capacitance
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
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