AO6420 参数 Datasheet PDF下载

AO6420

60V N-Channel MOSFET

N Channel Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Parameter

Symbol

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

V

GS

=4.5V, I

D

=3A

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=4.2A

I

S

=1A,V

GS

=0V

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=60V, V

GS

=0V

T

J

=55°

C

V

DS

=0V, V

GS

= ±20V

V

DS

=V

GS

I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=4.2A

T

J

=125°

C

1

20

50

85

60

13

0.78

1

3

450

V

GS

=0V, V

DS

=30V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

60

25

1.65

9.5

V

GS

=10V, V

DS

=30V, I

D

=4.2A

4.3

1.6

2.2

5.1

V

GS

=10V, V

DS

=30V, R

L

=7Ω,

R

GEN

=3Ω

I

F

=4.2A, dI/dt=100A/µs

2.6

15.9

2

25.1

28.7

7

4

20

3

35

2

11.5

5.5

540

75

60

2.3

Min

60

1

5

100

3

Typ

Max

Units

V

µA

nA

V

A

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=4.2A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t

≤

10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs

pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The SOA

curve provides a single pulse rating.

F.The current rating is based on the t

≤

10s thermal resistance rating.

Rev2: Feb. 2012

2/4

www.freescale.net.cn