AO4938
30V Dual N-Channel MOSFET
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
7V
60
I
D
(A)
4V
40
3.5V
20
V
GS
=3V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
20
18
R
DS(ON)
(mΩ)
Ω
V
GS
=4.5V
16
14
12
10
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
V
GS
=10V
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
50
V
GS
=10V
I
D
=8.8A
10
5
0
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
125°C
25°C
I
D
(A)
15
4.5V
20
6V
5V
25
30
V
DS
=5V
17
5
2
V
GS
=4.5V
10
I
D
=7A
40
I
D
=8.8A
35
30
R
DS(ON)
(mΩ)
Ω
I
S
(A)
25
20
15
25°C
10
5
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
4
125°C
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.0
0.2
25°C
125°C
40
3/8
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
