AO4932
Asymmetric Dual N-Channel MOSFET
C
FET1 Electrical Characteristics (T
J
=25° unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
T
J
=125°
C
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=11A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=9A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=11A
I
S
=1A,V
GS
=0V
C
T
J
=125°
1.1
60
10
15
12
75
0.4
0.7
4
930
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
90
45
0.7
16
V
GS
=10V, V
DS
=15V, I
D
=11A
7
1170
128
89
1.4
20
8.7
3.2
3
6
V
GS
=10V, V
DS
=15V, R
L
=1.4Ω,
R
GEN
=3Ω
I
F
=11A, dI/dt=500A/µs
1in
2
Min
30
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
0.5
500
100
1.65
2.1
12.5
18
15
mA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1400
170
125
2.1
24
10.5
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
2.4
23
4
5.5
5
7
6.5
8.5
8
Body Diode Reverse Recovery Charge I
F
=11A, dI/dt=500A/µs
ns
nC
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
2/9
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