AO4914, AO4914L
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=8.5A
Capacitance (pF)
1500
1250
C
iss
1000
750
500
250
0
0
4
8
12
16
20
0
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100.0
50
R
DS(ON)
limited
1ms
10ms
0.1s
1.0
1s
T
J(Max)
=150°C
T
A
=25°C
10s
DC
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
100µs
10µs
Power (W)
40
30
20
10
T
J(Max)
=150°C
T
A
=25°C
C
rss
5
10
15
20
25
30
8
V
GS
(Volts)
6
4
C
oss
FET+SCHOTTKY
2
0
V
DS
(Volts)
Figure 8: Capacitance Characteristics
I
D
(Amps)
10.0
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
40
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
0.01
0.00001
P
D
T
on
T
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.01
100
1000
5/8
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