AO4902 参数 Datasheet PDF下载

AO4902

General Description

Dual N-Channel Enhancement Mode Field

Effect Transistor with Schottky Diode

The AO4902 uses advanced trench technology to provide excellent R

DS(ON)

and low gate charge. The two identical

MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole

applications, for e.g. DDR memory.

Standard Product AO4902 is Pb-free (meets ROHS & Sony 259

specifications). AO4902L is a Green Product ordering option. AO4902 and AO4902L are electrically identical.

Features

V

DS

(V) = 30V

I

D

= 6.9A (V

GS

= 10V)

R

DS(ON)

< 27mΩ (V

GS

= 10V)

R

DS(ON)

< 32mΩ (V

GS

= 4.5V)

R

DS(ON)

< 50mΩ (V

GS

= 2.5V)

SCHOTTKY

V

DS

(V) = 30V, I

F

= 3A, V

F

=0.5V@1A

S2/A2

G2

S1/A1

G1

1

2

3

4

8

7

6

5

D2/K2

D2/K2

D1/K1

D1/K1

D1

K1

D2

K2

G1

S1

A1

G2

S2

A2

SOIC-8

Absolute Maximum Ratings T =25°C unless otherwise noted

A

Symbol

Parameter

V

DS

Drain-Source Voltage

Gate-Source Voltage

T

A

=25°C

Continuous Drain Current

A

Pulsed Drain Current

B

MOSFET

30

±12

6.9

5.8

40

Schottky

Units

V

V

A

V

GS

T

A

=70°C

I

D

I

DM

V

KA

T

A

=25°C

A

Schottky reverse voltage

Continuous Forward Current

Pulsed Forward Current

B

T

A

=25°C

Power Dissipation

Junction and Storage Temperature Range

Parameter: Thermal Characteristics MOSFET

t

≤

10s

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

C

A

T

A

=70°C

I

F

I

FM

30

3

2

2

1.44

-55 to 150

Typ

48

74

35

47.5

71

32

40

2

1.44

-55 to 150

Max

62.5

110

40

62.5

110

40

V

A

T

A

=70°C

P

D

T

J

, T

STG

Symbol

R

θJA

R

θJL

R

θJA

R

θJL

W

°C

Units

°C/W

Steady-State

Steady-State

t

≤

10s

Steady-State

Steady-State

Maximum Junction-to-Lead

Thermal Characteristics Schottky

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

°C/W

1/5

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