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AO4900 参数 Datasheet PDF下载

AO4900图片预览
型号: AO4900
PDF下载: 下载PDF文件 查看货源
内容描述: 双N通道30 -V ( DS ) MOSFET的高功率和电流处理能力 [Dual N-Channel 30-V (D-S) MOSFET High power and current handling capability]
分类和应用:
文件页数/大小: 6 页 / 461 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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Freescale
AO4900 / MC4900
Typical Electrical Characteristics (N-Channel)
10
Vgs Gate-Source Voltage ( V
I
D
=6.9a
CAPACITANCE (pF)
8
6
4
2
1600
1200
800
Coss
Ciss
f = 1MHz
V
GS
= 0 V
400
Crss
0
0
0
2
4
6
8
10
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, Charge (nC)
Figure 7. Gate Charge Characteristics
Vth, Gate-Source Thresthold Voltage
(V)
2.4
I
D
= 250mA
Figure 8. Capacitance Characteristics
50
P(pk), Peak Transient Power (W)
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25
0
25
50
V
DS
= V
GS
40
SINGLE PULSE
RqJA = 125C/W
TA = 25C
30
20
10
75 100 125 150 175
o
0
0.001
0.01
0.1
1
10
100
TA, AMBIENT TEMPERATURE ( C)
t1, TIME (sec)
Figure 9. Threshold Vs Ambient Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
qJA
(t) = r(t) * R
qJA
R
qJA
= 125 C/W
P(pk)
t
1
t
2
0.01
SINGLE PULSE
T
J
- T
A
= P * R
qJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
4
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