AO4882
40V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=20V
I
D
=8A
8
Capacitance (pF)
600
500
400
300
200
100
0
0
4
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
8
0
20
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
40
C
iss
V
GS
(Volts)
6
4
C
oss
2
C
rss
0
100.0
10000
R
DS(ON)
limited
T
A
=25°C
10.0
10µs
100µ
1000
Power (W)
I
D
(Amps)
1.0
1ms
T
J(Max)
=150°C
T
A
=25°C
DC
10ms
10s
100
0.1
10
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
P
D
T
on
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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