AO4854 参数 Datasheet PDF下载

AO4854

30V Dual N-Channel MOSFET

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=30V, V

GS

=0V

T

J

=55°

C

V

DS

=0V, V

GS

= ±20V

V

DS

=V

GS

I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=8A

R

DS(ON)

Static Drain-Source On-Resistance

T

J

=125°

C

V

GS

=4.5V, I

D

=4A

V

GS

=4V, I

D

=4A

g

FS

V

SD

I

S

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=8A

I

S

=1A,V

GS

=0V

1.2

30

15.5

21

18.5

20.5

30

0.75

1

2.5

600

V

GS

=0V, V

DS

=15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

77

50

0.5

12

V

GS

=10V, V

DS

=15V, I

D

=8A

6

2

2

V

GS

=10V, V

DS

=15V, R

L

=1.8Ω,

R

GEN

=3Ω

I

F

=8A, dI/dt=500A/µs

2

Min

30

Typ

Max

Units

V

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

1

5

10

1.8

2.4

19

25

23

26

µA

µA

V

A

mΩ

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

nC

ns

ns

ns

ns

Maximum Body-Diode Continuous Current

740

110

82

1.1

15

7.5

2.5

3

5

3.5

19

3.5

6

14

8

18

DYNAMIC PARAMETERS

Input Capacitance

C

iss

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

888

145

115

1.7

18

9

3

5

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=8A, dI/dt=500A/µs

10

22

ns

nC

A. The value of R

θJA

is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25° The

C.

value in any given application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150° using

≤

10s junction-to-ambient thermal resistance.

C,

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150° Ratings are based on low frequency and duty cycles to keep

C.

C.

initialT

J

=25°

D. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with

C.

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150° The SOA curve provides a single pulse ratin g.

2/6

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