AO4832
30V
Dual N-channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
6V
7V
4.5V
I
D
(A)
4V
40
10
3.5V
20
V
GS
=3V
0
1
2
3
4
5
5
0
0
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
25°C
125°C
20
15
5V
25
30
V
DS
=5V
60
I
D
(A)
0
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
20
Normalized On-Resistance
1.6
V
GS
=10V
I
D
=10A
V
GS
=4.5V
R
DS(ON)
(mΩ)
Ω
15
1.4
1.2
V
GS
=4.5V
I
D
=8A
10
V
GS
=10V
1
17
5
2
10
5
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
0.8
0
25
50
75
100
125
150
175
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
30
I
D
=10A
1.0E+02
1.0E+01
25
R
DS(ON)
(mΩ)
Ω
125°C
I
S
(A)
20
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
40
15
25°C
10
5
3/6
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