AO4830
80V
Dual N-channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=40V
I
D
=3.5A
8
Capacitance (pF)
800
C
iss
1000
V
GS
(Volts)
6
600
4
400
C
oss
200
C
rss
2
0
0
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
12
0
0
40
60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
80
100
I
D
(A), Peak Avalanche Current
100.0
T
A
=25°C
10.0
10
T
A
=125°C
I
D
(Amps)
T
A
=100°C
R
DS(ON)
limited
10µs
100µs
1ms
10ms
1.0
10ms
100ms
T
A
=150°C
0.1
T
J(Max)
=150°
C
T
A
=25°
C
100m
DC
10
1
0.000001
10s
100
0.00001
0.0001
0.0
0.1
1
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
T
A
=25°C
100
Power (W)
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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