AO4801A
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
15
10
5
-10V
VDS=-5V
-4.5V
-3V
125°C
-2.5V
25°C
VGS=-2V
4
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
90
70
50
30
10
1.8
1.6
1.4
1.2
1
VGS=-4.5V
ID=-3.5A
VGS=-10V
VGS=-2.5V
ID=-5A
17
VGS=-4.5V
VGS=-2.5V
5
ID=-2.5A
2
10
VGS=-10V
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
0
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Tem1p8erature
(Note E)
100
80
1.0E+01
1.0E+00
ID=-5A
125°C
40
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
60
25°C
40
25°C
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/5
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