AO4800 参数 Datasheet PDF下载

AO4800

Electrical Characteristics (T

J

=25°C unless otherwise noted)

Parameter

Symbol

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=24V, V

GS

=0V

T

J

=55°C

V

DS

=0V, V

GS

=±12V

V

DS

=V

GS

I

D

=250µA

V

GS

=4.5V, V

DS

=5V

V

GS

=10V, I

D

=6.9A

T

J

=125°C

R

DS(ON)

Static Drain-Source On-Resistance

V

GS

=4.5V, I

D

=6.0A

V

GS

=2.5V, I

D

=5A

12

0.7

25

1

22.6

33

27

42

16

0.71

Min

30

1

5

100

1.4

27

40

32

50

Typ

Max

Units

V

µA

nA

V

A

mΩ

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

g

FS

V

SD

I

S

Forward Transconductance

V

DS

=5V, I

D

=5A

Diode Forward Voltage

I

S

=1A

Maximum Body-Diode Continuous Current

1

3

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

Output Capacitance

C

rss

Reverse Transfer Capacitance

R

g

Gate resistance

SWITCHING PARAMETERS

Q

g

Total Gate Charge

Q

gs

Gate Source Charge

Q

gd

Gate Drain Charge

t

D(on)

Turn-On DelayTime

t

r

Turn-On Rise Time

t

D(off)

Turn-Off DelayTime

t

f

Turn-Off Fall Time

t

rr

Body Diode Reverse Recovery time

Q

rr

Body Diode Reverse Recovery charge

V

GS

=0V, V

DS

=15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

858

110

80

1.24

9.6

1.65

3

5.7

13

37

4.2

15.5

7.9

V

GS

=4.5V, V

DS

=15V, I

D

=6.9A

V

GS

=10V, V

DS

=15V, R

L

=2.2Ω,

R

GEN

=6Ω

I

F

=5A, dI/dt=100A/µs

I

F

=5A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The value

in any a given application depends on the user's specific board design. The current rating is based on the t

≤

10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80

µs

pulses, duty cycle 0.5% max.

2

E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The SOA

curve provides a single pulse rating.

2/6

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