AO4772
30V N-Channel MOSFET
General Description
AO4772 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional blocking switch,or for "standard buck" DC-DC conversion
applications.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
6A
< 30mΩ
< 42mΩ
SOIC-8
K
K
K
D
D
A
D
Top View
A
A
S
G
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
MOSFET
Symbol
Drain-Source Voltage
30
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Schottky
Units
V
V
A
A
mJ
V
GS
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
V
KA
I
F
P
D
T
J
, T
STG
±20
6
5
30
10
5
30
4
3
2
1.3
-55 to 150
2
1.3
-55 to 150
Avalanche energy L=0.1mH
Schottky reverse voltage
C
Continuous Forward T
A
=25°
Current
Power Dissipation
B
V
A
W
°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter: MOSFET
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Parameter: Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
R
θJA
R
θJL
Typ
48
74
32
48
74
31
Max
62.5
90
40
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
t
≤
10s
Steady-State
Steady-State
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
