AO4724
30V N-Channel MOSFET
General Description
SRFET
TM
The AO4724 uses advanced trench technology with a monolithically integrated Schottky
diode to provide excellent R
DS(ON)
,and low gate charge. This device is suitable for use as a low
side FET in SMPS, load switching and general purpose applications.
Features
V
DS
(V) = 30V
I
D
= 10.5A
(V
GS
= 10V)
R
DS(ON)
< 17.5mΩ (V
GS
= 10V)
R
DS(ON)
< 29 mΩ (V
GS
= 4.5V)
SOIC-8
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Power Dissipation
Avalanche Current
B
Repetitive avalanche energy 0.3mH
B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
AF
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Steady-State
B
Symbol
V
DS
V
GS
Maximum
10 Sec
Steady State
30
±20
10.5
7.7
6.2
80
3.1
2.0
13
25
-55 to 150
1.7
1.1
8.5
Units
V
V
A
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
W
A
mJ
°
C
Symbol
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
1/4
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
