AO4722
30V N-Channel MOSFET
General Description
SRFET
TM
The AO4722 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent R
DS(ON)
,and low gate charge. This device is suitable for use
as a low side FET in SMPS, load switching and general purpose applications.
Features
V
DS
(V) = 30V
I
D
=11.6A (V
GS
= 10V)
R
DS(ON)
< 14mΩ (V
GS
= 10V)
R
DS(ON)
< 22mΩ (V
GS
= 4.5V)
SOIC-8
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
10 Sec
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
A
Current
Pulsed Drain Current
Avalanche Current
B
Repetitive avalanche energy L=0.3mH
T
A
=25°
C
Power Dissipation
T
A
=70°
C
B
B
Steady State
Units
V
30
±20
8.5
6.8
100
17
43
V
GS
T
A
=25°
C
T
A
=70°
C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
3.1
2.0
11.6
9.3
A
mJ
1.7
1.1
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
-55 to 150
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
1/4
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