AO4720
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
10V
100
80
I
D
(A)
60
40
20
V
GS
=3.5V
0
0
1
2
3
4
5
V
DS
(Volts)
0
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
1.8
Normalized On-Resistance
V
GS
=10V
1.6
1.4
V
GS
=4.5V
1.2
1
0.8
0
5
10
15
20
25
30
0
30
60
90
120
150
180
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
I
D
=11A
I
D
=13A
7V
5V
I
D
(A)
4.5V
6V
30
25
20
15
10
5
125°
25°C
V
DS
=5V
4V
DYNAMIC PARAMETERS
Figure 1: On-Region Characteristics
18
16
V
GS
=4.5V
R
DS(ON)
(m
Ω
)
14
12
10
8
6
V
GS
=10V
30
I
D
=13A
25
1.0E+02
1.0E+01
1.0E+00
125°C
R
DS(ON)
(m
Ω
)
I
S
(A)
20
125°C
1.0E-01
1.0E-02
1.0E-03
25°C
15
10
25°C
5
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
3/6
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