AO4712
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-01
0.9
0.8
1.E-02
V
DS
=30V
V
SD
(V)
I
R
(A)
1.E-03
V
DS
=15V
1.E-04
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.E-05
100
150
200
Temperature (°
C)
Figure 13: Diode Reverse Leakage Current vs.
Junction Temperature
12
di/dt=800A/µs
125ºC
9
Q
rr
(nC)
25ºC
6
Q
rr
125ºC
3
I
rm
25ºC
0
0
5
10
15
20
25
30
5
4
3
2
1
I
S
(A)
Figure 15: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
10
I
s
=20A
8
4
Q
rr
(nC)
t
rr
(ns)
Q
rr
4
2
I
rm
0
0
200
400
600
800
0
1000
di/dt (A/µs)
µ
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
125ºC
2
25ºC
3
25ºC
I
rm
(A)
6
25ºC
9
125ºC
6
6
25ºC
t
rr
(ns)
I
rm
(A)
4
t
rr
125ºC
2
S
25ºC
0
0
5
10
15
20
25
30
I
S
(A)
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
0.5
0
2
6
8
di/dt=800A/µs
125ºC
0
50
0
0
100
150
200
Temperature (°
C)
Figure 14: Diode Forward voltage vs. Junction
Temperature
50
I
S
=1A
5A
20A
10A
3
2.5
1
12
I
s
=20A
3
2.5
2
25ºC
40
125ºC
6
125ºC
t
rr
1.5
1
S
0.5
0
1000
5/6
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S
S
1.5
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
