AO4629
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-10V
20
-8V
-5V
-4.5V
30
25
20
15
-I
D
(A)
-4V
10
10
5
V
GS
=-3.5V
5
0
0
1
2
3
4
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
80
70
60
R
DS(ON)
(mΩ)
Ω
50
40
30
20
10
0
4
6
8
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
2
V
GS
=-10V
V
GS
=-4.5V
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
50
V
GS
=-10V
I
D
=-5.5A
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
125°C
25°C
-I
D
(A)
15
V
DS
=-5V
0
V
GS
I
D
=-4.5A
17
5
2
=-4.5V
10
120
I
D
=-5.5A
100
R
DS(ON)
(mΩ)
Ω
1.0E+02
1.0E+01
1.0E+00
-I
S
(A)
40
80
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
60
125°C
40
1.0E-04
25°C
20
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
4
1.0E-05
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.0
0.2
7/9
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