AO4627
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
-10V
12
-8V
-5V
9
-I
D
(A)
-4.5V
6
-4V
3
V
GS
=-3.5V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
200
Normalized On-Resistance
180
160
R
DS(ON)
(mΩ)
Ω
140
120
100
80
60
40
0
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
2
4
V
GS
=-10V
V
GS
=-4.5V
1.6
V
GS
=-10V
I
D
=-3.5A
0
1
2
3
4
5
6
2
25°C
-I
D
(A)
6
-6V
8
10
V
DS
=-5V
4
125°C
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.4
1.2
1
17
5
2
V
GS
=-4.5V
10
I
D
=-2A
0.8
0
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
50
300
I
D
=-3.5A
260
220
R
DS(ON)
(mΩ)
Ω
180
125°C
140
-I
S
(A)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°C
25°C
40
100
60
2
25°C
1.0E-04
1.0E-05
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.0
0.2
7/9
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