AO4612
60V Complementary Enhancement
Mode Field Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
20
-10V
15
-4.0V
-I
D
(A)
10
-3.5V
5
V
GS
=-3.0V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
5
25°C
0
1
1.5
2
2.5
3
3.5
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
20
15
10
125°C
-4.5V
30
25
V
DS
=-5V
130
Normalized On-Resistance
120
110
100
90
80
70
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
180
160
R
DS(ON)
(mΩ)
Ω
140
120
100
80
60
2
3
25°C
4
5
6
7
8
9
10
125°C
-I
S
(A)
I
D
=-3.2A
V
GS
=-10V
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=-4.5V
I
D
=-2.8A
I
D
=-3.2A
V
GS
=-10V
V
GS
=-4.5V
R
DS(ON)
(mΩ)
Ω
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.0
0.4
0.6
0.8
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.2
1.0
25°C
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
7/9
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