AO4576
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (
αMOS
LV) technology
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
20A
< 5.8mΩ
< 9.8mΩ
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
V
DS
Spike
Power Dissipation
B
C
C
C
Maximum
30
±20
20
12
144
25
31
36
3.1
1.2
-55 to 150
Units
V
V
A
A
mJ
V
W
°C
V
GS
T
A
=25°C
T
A
=100°C
I
D
I
DM
I
AS
E
AS
V
SPIKE
P
D
T
J
, T
STG
100ns
T
A
=25°C
T
A
=100°C
Avalanche energy L=0.1mH
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
