AO4498
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=18A
Capacitance (pF)
3000
2500
C
iss
2000
1500
1000
500
0
0
20
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
40
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
R
DS(ON)
limited
10µs
100µs
1ms
10ms
100ms
10s
5
10
30
C
oss
8
V
GS
(Volts)
6
4
2
0
120
I
D
(A), Peak Avalanche Current
100
80
60
40
20
0
0.000001
T
A
=150°
T
A
=25°C
T
A
=100°
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
T
A
=125°
0.0
0.1
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
T
J(Max)
=150°C
T
A
=25°C
1
DC
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
T
J(Max)
=150°C
T
A
=25°C
100
Power (W)
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
