AO4498E
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=18A
Capacitance (pF)
3500
3000
2500
2000
1500
1000
C
oss
500
0
0
5
20
25
30
35
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
15
45
0
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
iss
8
V
GS
(Volts)
6
4
2
1000.0
100.0
10000
T
A
=25°
C
I
D
(Amps)
Power (W)
10.0
1.0
0.1
0.0
R
DS(ON)
limited
10µs
100µs
1ms
10ms
1000
100
T
J(Max)
=150°C
T
A
=25°C
0.1
1
V
DS
(Volts)
10
10s
DC
100
10
0.01
1
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.01
Single Pulse
T
4/5
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