AO4486
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
1000
Capacitance (pF)
V
DS
=50V
I
D
=3A
C
iss
800
600
400
200
0
0
10
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
20
0
40
60
80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
100
8
V
GS
(Volts)
6
4
2
C
rss
C
oss
0
100.0
I
AR
(A) Peak Avalanche Current
T
A
=100°C
100.0
10.0
R
DS(ON)
limited
10µs
100µs
I
D
(Amps)
T
A
=25°C
10.0
T
A
=125°C
1.0
1ms
0.1
T
A
=150°C
T
J(Max)
=150°C
T
A
=25°C
DC
10ms
10s
1.0
1
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 9: Single Pulse Avalanche capability (Note C)
0.0
0.1
10
100
V
DS
(Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
1
10000
T
A
=25°C
1000
Power (W)
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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