AO4480
40V N-Channel MOSFET
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=14A
I
S
=1A,V
GS
=0V
Conditions
I
D
=250uA, V
GS
=0V
V
DS
=32V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=14A
T
J
=125°
C
1
70
9
13
12
50
0.7
1
4
1600
V
GS
=0V, V
DS
=20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
320
100
3.4
22
V
GS
=10V, V
DS
=20V, I
D
=14A
10.5
4.2
4.8
3.5
V
GS
=10V, V
DS
=20V, R
L
=1.5Ω,
R
GEN
=3Ω
I
F
=14A, dI/dt=100A/µs
6
13.2
3.5
31
33
1920
15.5
11.5
2
Min
40
1
5
±100
3
Typ
Max
Units
V
uA
µA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=14A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25° The value in any given application depends on the user's specific board design.
C.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
C.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev2: Nov. 2010
2/4
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