AO4476A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=15A
Capacitance (pF)
1600
1400
1200
V
GS
(Volts)
6
1000
800
600
400
2
200
0
0
10
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
20
0
0
C
rss
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
oss
C
iss
8
4
70
I
AR
(A) Peak Avalanche Current
60
50
40
30
20
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 9: Single Pulse Avalanche capability (Note
C)
T
A
=125°C
T
A
=150°C
I
D
(Amps)
T
A
=100°C
T
A
=25°C
1000.0
100.0
R
DS(ON)
limited
10µs
100µs
1ms
10ms
10.0
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
10s
DC
0.0
0.01
1
10
V
DS
(Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
0.1
100
10000
T
A
=25°C
1000
Power (W)
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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