AO4449 参数 Datasheet PDF下载

AO4449

30V P-Channel MOSFET

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=-250µA, V

GS

=0V

V

DS

=-30V, V

GS

=0V

C

T

J

=55°

V

DS

=V

GS

I

D

=-250µA

V

GS

=-10V, V

DS

=-5V

V

GS

=-10V, I

D

=-7A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

=-4.5V, I

D

=-5A

Forward Transconductance

Diode Forward Voltage

V

DS

=-5V, I

D

=-7A

I

S

=-1A,V

GS

=0V

C

T

J

=125°

-1.3

-40

21

31.5

33

18

-0.8

-1

-3.5

760

V

GS

=0V, V

DS

=-15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

1.5

140

95

3.2

13.6

V

GS

=-10V, V

DS

=-15V, I

D

=-7A

6.7

2.5

3.2

8

V

GS

=-10V, V

DS

=-15V,

R

L

=2.15Ω, R

GEN

=3Ω

I

F

=-7A, dI/dt=100A/µs

1in

2

Min

-30

Typ

Max

Units

V

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

I

DSS

Zero Gate Voltage Drain Current

-1

-5

-1.85

-2.4

34

38

54

µA

V

DS

=0V, V

GS

= ±20V

Gate-Body leakage current

The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for u

±100

nA

V

GS(th)

I

D(ON)

Gate Threshold Voltage

On state drain current

V

A

mΩ

mΩ

S

V

A

pF

pF

pF

5

16

8

Ω

nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=-7A, dI/dt=100A/µs

6

17

5

15

9.7

A. The value of R

θJA

is measured with the device mounted on

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150°C, using

≤

10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J

=25°C.

D. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

2/6

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