AO4448
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=75°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
T
0.01
140
130
120
Q
rr
(nC)
110
100
90
80
70
60
0
5
10
15
20
25
30
Q
rr
25ºC
125ºC
di/dt=800A/µs
I
rm
25ºC
125ºC
12
10
8
25
di/dt=800A/µs
20
15
10
t
rr
125ºC
3
2.5
2
t
rr
(ns)
I
rm
(A)
25ºC
1.5
1
25ºC
S
S
1
25ºC
S
0.5
0
1000
6
4
2
0
5
0
0
S
125ºC
0.5
0
5
10
15
20
25
30
I
S
(A)
Figure 13: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
100
I
s
=20A
80
60
40
20
I
rm
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 15: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
2
1000
Q
rr
125ºC
25ºC
8
6
10
4
5
125ºC
25ºC
10
Q
rr
(nC)
I
rm
(A)
14
12
35
30
25
t
rr
(ns)
20
15
I
S
(A)
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
2.5
125ºC
I
s
=20A
2
1.5
t
rr
40
25ºC
125ºC
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
5/6
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