AO4442 参数 Datasheet PDF下载

AO4442

75V N-Channel MOSFET

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=10mA, V

GS

=0V

V

DS

=60V, V

GS

=0V

T

J

=55°

C

V

DS

=0V, V

GS

= ±25V

V

DS

=V

GS

, I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=3.1A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

=4.5V, I

D

=2A

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=3.1A

I

S

=1A,V

GS

=0V

T

J

=125°

C

1

20

100

180

120

8.2

0.79

1

3.5

303

V

GS

=0V, V

DS

=37.5V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

37

17

2.2

5.2

V

GS

=10V, V

DS

=37.5V, I

D

=3.1A

2.46

1

1.34

4.5

V

GS

=10V, V

DS

=37.5V, R

L

=12Ω,

R

GEN

=3Ω

I

F

=3.1A, dI/dt=100A/µs

2

Min

75

Typ

Max

Units

V

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

1

5

100

2.4

3

130

220

165

µA

nA

V

A

mΩ

mΩ

S

V

A

pF

pF

pF

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

350

3

6.5

3.5

Ω

nC

nC

nC

nC

ns

ns

ns

ns

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=3.1A, dI/dt=100A/µs

2.3

15.6

1.9

22

22

30

ns

nC

A. The value of R

θJA

is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25° The

C.

value in any given application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150° using

≤

10s junction-to-ambient thermal resistance.

C,

C.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150° Ratings are based on low frequency and duty cycles to keep

initialT

J

=25°

C.

D. The R

θJA

is the sum of the thermal impedance from junction to lead R

θJL

and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in

2

FR-4 board with

C.

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150° The SOA curve provides a single pulse ratin g.

2/5

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