AO4421
60V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
V
DS
=-30V
I
D
=-6.2A
Capacitance (pF)
3500
3000
2500
2000
1500
1000
C
oss
500
0
0
10
20
30
40
50
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
10
20
30
40
50
60
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
rss
C
iss
8
-V
GS
(Volts)
6
4
2
100.0
T
J(Max)
=150° T
A
=25°
C,
C
R
DS(ON)
limited
0.1s
100µs
1ms
10ms
10µs
Power (W)
40
T
J(Max)
=150°
C
T
A
=25°
C
30
-I
D
(Amps)
10.0
20
1.0
1s
10s
DC
10
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°
C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
4/4
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