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AO4420A 参数 Datasheet PDF下载

AO4420A图片预览
型号: AO4420A
PDF下载: 下载PDF文件 查看货源
内容描述: 30V N沟道MOSFET [30V N-Channel MOSFET]
分类和应用:
文件页数/大小: 4 页 / 349 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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AO4420A
30V N-Channel MOSFET
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=12.7A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=13.7A
I
S
=1A,V
GS
=0V
30
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, ID=13.7A
T
J
=125°
C
0.6
40
8.3
12.5
9.7
37
0.76
1
5
3656
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
256
168
0.86
30.5
V
GS
=4.5V, V
DS
=15V, I
D
=13.7A
4.6
8.6
5.5
V
GS
=10V, V
DS
=15V, R
L
=1.1Ω,
R
GEN
=3Ω
I
F
=13.7A, dI/dt=100A/µs
3.4
49.8
5.9
22.5
12.5
9
7
75
11
28
16
1.1
36
4050
10.5
15
12
1.1
Min
30
0.004
1
5
100
2
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=13.7A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The SOA
C.
curve provides a single pulse rating.
F.The current rating is based on the t
10s thermal resistance rating.
Rev 1 : Nov. 2010
2/4
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