AO4404B
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=15V
I
D
=8.5A
4
Capacitance (pF)
800
C
iss
600
1000
V
GS
(Volts)
3
2
400
C
oss
200
C
rss
1
0
0
4
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
8
0
0
10
V (Volts)
15
20
25
DS
Figure 8: Capacitance Characteristics
5
30
100.0
I
AR
(A) Peak Avalanche Current
T
A
=25°C
100.0
10µs
T
A
=100°C
10.0
R
DS(ON)
limited
100µs
I
D
(Amps)
T
A
=150°C
10.0
T
A
=125°C
1ms
1.0
10ms
T
J(Max)
=150°C
T
A
=25°C
10s
DC
0.1
1.0
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 9: Single Pulse Avalanche capability (Note C)
1
0.0
0.01
1
10
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
100
10000
T
A
=25°C
1000
Power (W)
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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