AO4354
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
Capacitance (pF)
3000
2500
2000
1500
1000
500
0
0
20
30
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
50
0
C
rss
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
25
8
C
iss
V
GS
(Volts)
6
4
C
oss
2
0
1000.0
100.0
10µs
10000
T
A
=25°C
T
J(Max)
=150°C
T
C
=25°C
R
DS(ON)
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
10µs
Power (W)
1000
100µs
1ms
10ms
T
J(Max)
=150°C
T
C
=25°C
100
100
DC
10
1
0.00001
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJA
=75°C/W
40
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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