AO4310
36V N-Channel MOSFET
General Description
The AO4310 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are minimized due to an extremely low combination of R
DS(ON)
and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body
diode.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
36V
27A
< 3.1mΩ
< 4.2mΩ
D
G
S
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
36
±20
27
22
390
67
224
3.6
2.3
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
27
52
10
Max
35
65
15
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
