AO4302
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
Capacitance (pF)
4000
3500
3000
2500
2000
1500
C
oss
1000
2
500
0
0
30
40
50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
20
60
0
0
C
rss
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
25
C
iss
8
V
GS
(Volts)
6
4
1000.0
I
AR
(A) Peak Avalanche Current
T
A
=25°C
T
A
=100°C
100.0
1000.0
100.0
100µs
R
DS(ON)
limited
1ms
10ms
I
D
(Amps)
10.0
1.0
0.1
0.0
T
A
=150°C
10.0
T
A
=125°C
T
J(Max)
=150°C
T
A
=25°C
100ms
10s
DC
1.0
1
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 9: Single Pulse Avalanche capability (Note C)
0.01
1
10
V
DS
(Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
0.1
100
10000
T
A
=25°C
1000
Power (W)
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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