AO3435
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=-10V
I
D
=-3.5A
Capacitance (pF)
1400
1200
1000
800
C
iss
600
400
C
oss
200
0
0
2
4
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
C
rss
0
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
4
-V
GS
(Volts)
3
2
1
100.00
1000
T
J(Max)
=150°C
T
A
=25°C
10µs
10.00
R
DS(ON)
limited
100
Power (W)
-I
D
(Amps)
100µ
1ms
10ms
0.1s
1.00
10
0.10
T
J(Max)
=150°C
T
A
=25°C
0.01
0.1
1
10
DC
1s
1
100
0.1
0.00001
0.001
0.1
10
1000
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
12
0.1
P
D
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
T
on
T
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
4/4
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