AO3434
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
1
2
3
4
5
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=4.2A
Capacitance (pF)
500
400
C
iss
300
200
C
oss
100
C
rss
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
0
100.0
10µs
10.0
I
D
(Amps)
R
DS(ON)
limited
100µ
1m
10ms
T
J(Max)
=150°C
T
A
=25°C
DC
0.1s
10s
30
25
Power (W)
20
15
10
5
0
0.001
T
J(Max)
=150°C
T
A
=25°C
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
0.1
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/4
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