AO3421
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
-10V
12
-8V
-5V
9
-I
D
(A)
-4.5V
6
-4V
3
V
GS
=-3.5V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
200
Normalized On-Resistance
180
160
R
DS(ON)
(m
Ω
)
140
120
100
80
60
40
0
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
2
4
V
GS
=-10V
0.8
0
25
50
75
100
125
150
175
V
GS
=-4.5V
1.6
0
0
1
2
3
4
5
6
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
2
25°
C
-I
D
(A)
6
-6V
8
10
V
DS
=-5V
4
125°
C
1.4
V
GS
=-10V
I
D
=-2.6A
1.2
1
V
GS
=-4.5V
I
D
=-2A
17
5
2
10
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
300
I
D
=-2.6A
260
220
R
DS(ON)
(m
Ω
)
180
140
100
60
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°
C
125°
C
-I
S
(A)
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°
C
25°
C
40
3/5
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