Freescale
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
•
Miniature SOT-23 Surface Mount Package
Saves Board Space
•
Fast switching speed
•
High performance trench technology
AO3415/ MC3415A
AM2327P
PRODUCT SUMMARY
V
DS
(V)
r
DS (on )
(OHM)
0.052 @ V
GS
= -4.5V
-20
0.072 @ V
GS
= -2.5V
0.120 @ V
GS
= -1.8V
I
D
(A)
-3.6
-3.1
-2.7
G
D
S
o
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parame te r
Symbol Ratings Units
V
DS
Drain-Source Voltage
-20
V
V
GS
Gate-Source Voltage
±
8
Continuous Drain Current
Pulsed Drain Current
b
a
a
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
-3.6
-1.8
-10
±
0.46
1.25
0.8
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t <= 5 sec
Steady-State
Symbol
R
THJA
Maximum
100
150
Units
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
