SHARP CORPORRTION
(Fig. 1) Forward
ambient
current vs.
temperature
(Fig. 2) Diode power diss&iok<->,
vs. ambient temperature
-..
5
2
.+
i
P
t;
80
70
60
40
20
3
&
4
-30
0
Ambient
25
55
75
100
Ta ( “C )
125
-30
0
Ambient
25
55
75
100
Ta ( ‘C )
125
temperature
temperature
(Fig. 3) Collector power dissipation
vs. ambient temperature
(Fig. 4) Total power
vs. ambient
dissipation
temperature
-30
0
Ambient
25
50
75
100
Ta ( ‘C )
125
r
-30
0
Ambient
25
50
75
100
Ta (‘C )
125
temperature
temperature
2 2000
1000
i
500
2
200
z
.5
(Fig. 5) Peak forward current
vs. duty ratio
PulsewidthS
Ta=25’C
ps
;
100
m” 50
z
2
20
Y
10
2
5 lo-‘2 5 lo”2 5 lo-‘2
e
Duty ratio
5 10”
J