PC8171
X
NSZ Series
s
Electro-optical Characteristics
Parameter
Symbol
Forward voltage
V
F
Reverse current
I
R
Terminal capacitance
C
t
Collector dark current
I
CEO
Collector-emitter breakdown voltage
BV
CEO
Emitter-collector breakdown voltage
BV
ECO
I
C
Collector current
Collector-emitter saturation voltage V
CE (sat)
Isolation resistance
R
ISO
C
f
Floating capacitance
tr
Rise time
Response time
tf
Fall time
*1
(Ta=25°C)
Conditions
I
F
=10mA
V
R
=4V
V=0, f=1kHz
V
CE
=50V,
I
F
=0
I
C
=0.1mA, I
F
=0
I
E
=10µA, I
F
=0
I
F
=0.5mA,
V
CE
=5V
I
F
=10mA,
I
C
=1mA
DC500V 40 to 60%RH
V=0, f=1MHz
V
CE
=2V,
I
C
=2mA,
R
L
=100Ω
MIN.
−
−
−
−
70
6
0.5
−
5×10
10
−
−
−
10
TYP.
1.2
−
30
−
−
−
−
−
1×10
11
0.6
4
3
−
MAX.
1.4
10
250
100
−
−
3.0
0.2
−
1.0
18
18
−
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
kV/µs
Transfer characteristics
Output
Input
Common mode rejection voltage
CMR
Ta=25°C, R
L
=470Ω,
V
CM
=1.5kV
(peak),
I
F
=0mA,
V
CC
=9V,
Vnp=100mV
*1 Refer to Fig.1.
Fig.1 Test Circuit for Common Mode Rejection Voltage
(dV/d
t
)
V
CM
R
L
V
np
V
CC
1)
V
cp
V
np
V
CM
V
CM :
High wave
V
O
pulse
(V
cp
Nearly
=
dV/d
t
×C
f
×R
L
)
R
L
=470Ω
1) V
cp
: Voltage which is generated by displacement current in floating
V
CC
=9V
capacitance between primary and secondary side.
Fig.2 Forward Current vs. Ambient
Temperature
Fig.3 Diode Power Dissipation vs. Ambient
Temperature
10
Diode power dissipation P (mW)
0
25
50
75
100
125
15
Forward current I
F
(mA)
10
5
5
0
−30
0
−30
0
25
50
75
100
125
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
