PC8171xNSZ Series
■
Absolute Maximum Ratings
(T
a
=25˚C)
Parameter
Symbol
Rating
Unit
10
Forward current
mA
I
F
*1
200
Peak forward current
I
FM
mA
Reverse voltage
V
R
V
6
15
Power dissipation
mW
P
*4
Collector-emitter voltage V
CEO
V
80
6
Emitter-collector voltage V
ECO
V
50
I
C
Collector current
mA
150
Collector power dissipation
P
C
mW
P
tot
170
Total power dissipation
mW
*2
Isolation voltage
V
iso (rms)
5.0
kV
T
opr
Operating temperature
˚C
−30
to
+100
T
stg
Storage temperature
˚C
−55
to
+125
*3
Soldering temperature
T
sol
˚C
260
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
*4 Up to Data code"P7"(July 2002)V
CEO
: 70V.
■
Electro-optical Characteristics
Parameter
Symbol
Forward voltage
V
F
I
R
Reverse Current
Terminal capacitance
C
t
Collector dark current
I
CEO
Collector-emitter breakdown voltage BV
CEO
Emitter-collector breakdown voltage BV
ECO
Collector current
I
C
Collector-emitter saturation voltage V
CE (sat)
Isolation resistance
R
ISO
Floating capacitance
C
f
Rise time
t
r
Response time
Fall time
t
f
Common mode rejection voltage
CMR
Conditions
I
F
=10mA
V
R
=4V
V=0, f=1kHz
V
CE
=50V,
I
F
=0
I
C
=0.1mA,
I
F
=0
I
E
=10µA,
I
F
=0
I
F
=0.5mA,
V
CE
=5V
I
F
=10mA,
I
C
=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
Output
Input
Input
Output
Transfer
charac-
teristics
V
CE
=2V,
I
C
=2mA,
R
L
=100Ω
T
a
=25˚C,
R
L
=470Ω,
V
CM
=1.5kV(peak)
I
F
=0,
V
CC
=9V,
V
np
=100mV
MIN.
−
−
−
−
*5
80
6
0.5
−
5×10
10
−
−
−
10
TYP.
1.2
−
30
−
−
−
−
−
1×10
11
0.6
4
3
−
MAX.
1.4
10
250
100
−
−
3.0
0.2
−
1.0
18
18
−
(T
a
=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
kV/µs
*5 Up to Data code"P7"(July 2002)BV
CEO
≥
70V.
Sheet No.: D2-A03301EN
4
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
